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Ultrastar DC SN840

Ultrastar NVMe Series

  • Low Latency and Maximum Throughput for High-Transaction Workloads
  • Accelerate Access to Critical Data
  • Maximum Throughput – Up to 1.2M read IOPS to help power through demanding workloads
  • Low Latency – Predictable throughput for high-transaction workloads
  • Design Flexibility – Choice of form factors to support range of data centers requirements
  • FIPS & TAA compliant model available (please indicate in quote inquiry)





Accelerate Access to Critical Data for Data-Intensive Workloads and Applications

Ultrastar NVMe series SSDs perform at the speed of today’s business needs. Enabling faster intelligence & access to critical data, these SSDs meet the growing digital demands of your business applications. Ultrastar DC SN200 delivers extreme performance & ultra-low latency to the top tier of enterprise storage. It takes hyper-converged infrastructure (HCI) system throughput to new levels & helps scale on-line transaction processing (OLTP). Our Essential NVMe drives, Ultrastar DC SN640 & DC SN630, offer low latency & higher bandwidth for a seamless transition away from SATA SSDs in mixed-use & read-intensive applications. This high throughput & low latency delivers high performance for deeper insights & faster results for today’s data intensive applications. Ultrastar DC SN340 provides a power efficient cost-optimized solution for very read⁠-⁠intensive applications & warm storage.



1,920GB
3,840GB
7,680GB
15,360GB
1,600GB
3,200GB
6,400GB
Model Information
Endurance (Drive writes per day, DW/D)2
1 DW/D
1 DW/D
1 DW/D
1 DW/D
3 DW/D
3 DW/D
3 DW/D
Capacity1
1,920GB
3,840GB
7,680GB
15,360GB
1,600GB
3,320GB
6,400GB
Maximum Petabytes Written2
3.504
7.008
14.016
28.032
8.76
17.52
35.04
Configuration
Interface
NVMe™ 1.3c, Dual Port PCIe Gen 3.1 x4
NVMe™ 1.3c, Dual Port PCIe Gen 3.1 x4
NVMe™ 1.3c, Dual Port PCIe Gen 3.1 x4
NVMe™ 1.3c, Dual Port PCIe Gen 3.1 x4
NVMe™ 1.3c, Dual Port PCIe Gen 3.1 x4
NVMe™ 1.3c, Dual Port PCIe Gen 3.1 x4
NVMe™ 1.3c, Dual Port PCIe Gen 3.1 x4
Form Factor
U.2 2.5", 15mm
U.2 2.5", 15mm
U.2 2.5", 15mm
U.2 2.5", 15mm
U.2 2.5", 15mm
U.2 2.5", 15mm
U.2 2.5", 15mm
Flash Memory Technology
WDC BiCS3 3D TLC NAND
WDC BiCS3 3D TLC NAND
WDC BiCS3 3D TLC NAND
WDC BiCS3 3D TLC NAND
WDC BiCS3 3D TLC NAND
WDC BiCS3 3D TLC NAND
WDC BiCS3 3D TLC NAND
Performance3
Read Throughput (max MB/s, Seq 64KiB)
3470
3470
3470
3470
3470
3470
3470
Write Throughput, (max MB/s, Seq 64KiB)
2280
3250
3200
3190
2300
3300
3200
Read IOPS (max, Rnd 4KiB)
736K
780K
780K
780K
736K
780K
780K
Write IOPS (max, Rnd 4KiB)
108K
159K
160K
149K
224K
257K
253K
Mixed IOPS (max, 70%R/30%W, 4KiB)
231K
389K
373K
401K
341K
503K
472K
Read Latency (µs, avg.) (4KiB, QD1)4
74
75
82
84
74
75
82
Reliability
Uncorrectable Bit Error Rate (UBER)
1 in 1017
1 in 1017
1 in 1017
1 in 1017
1 in 1017
1 in 1017
1 in 1017
MTBF (M hours, projected)5
2.5
2.5
2.5
2.5
2.5
2.5
2.5
Annualized Failure Rate (AFR)
0.35%
0.35%
0.35%
0.35%
0.35%
0.35%
0.35%
Availability
24x7
24x7
24x7
24x7
24x7
24x7
24x7
Limited Warranty6
5 years
5 years
5 years
5 years
5 years
5 years
5 years
Data Retention
40C/90-day equivalent
40C/90-day equivalent
40C/90-day equivalent
40C/90-day equivalent
40C/90-day equivalent
40C/90-day equivalent
40C/90-day equivalent
Power
Requirement (DC +/- 5%)
12V +/- 15% 3.3V +/- 15%
12V +/- 15% 3.3V +/- 15%
12V +/- 15% 3.3V +/- 15%
12V +/- 15% 3.3V +/- 15%
12V +/- 15% 3.3V +/- 15%
12V +/- 15% 3.3V +/- 15%
12V +/- 15% 3.3V +/- 15%
Operating (W, max average)
18
18
18
18
18
18
18
Idle (W)
6
6
6
6
6
6
6
Physical Size
z-height (mm)
15
15
15
15
15
15
15
Dimensions (width x length, mm)
69.85 x 100.45
69.85 x 100.45
69.85 x 100.45
69.85 x 100.45
69.85 x 100.45
69.85 x 100.45
69.85 x 100.45
Weight (g, max)
172
173
160
180
172
173
184
Environmental
Operating Temperature (Case)
0℃ to 70℃
0℃ to 70℃
0℃ to 70℃
0℃ to 70℃
0℃ to 70℃
0℃ to 70℃
0℃ to 70℃
Non-Operating Temperature7
-40℃ to 85℃
-40℃ to 85℃
-40℃ to 85℃
-40℃ to 85℃
-40℃ to 85℃
-40℃ to 85℃
-40℃ to 85℃

Disclosures

1: One megabyte (MG) is equal to one million bytes, one gigabyte (GB) is equal to 1,000MB (one billion bytes), one terabyte (TB) is equal to 1,000GB (one trillion bytes), and one petabyte (PB) is equal to 1,000TB. Actual user capacity may be less due to operating environment.
2: Endurance rating based on DW/D using 4KiB 100% random write and JESD 219 workloads over 5 years.
3: Based on internal testing. Performance will vary by capacity point, or with the changes in useable capacity. Consult product manual for further details. All performance measurements are in full sustained mode and are peak values. Subject to change.
4: Average random read latency at 4KiB, QD=1
5: MTBF and AFR specifications will be based on a sample population and are estimated by statistical measurements and acceleration algorithms under typical operating conditions for this drive model. MTBF and AFR rating do not predict an individual drive's reliability and do not constitute a warranty.
6: The warranty for the product will expire on the earlier of (i) the date when the flash media has reached one-percent (1%) of its remaining life or (ii) the expiration of the time period associated with the product.
7: Values are based on ambient temperature. Avoid non-operational exposure to temperatures in excess of 40℃ for periods exceeding three months.



Highlights

  • Up to 1.2M random read IOPS
  • Capacities from 800GB to 7.68TB
  • High-performance PCIe Gen 3 & NVMe compliant
  • Enterprise Data Durability Features
  • Options for read-intense and mixed-use workloads
  • Enterprise-class 2M hour MTBF4 reliability rating

Applications and Workload

  • Mission-Critical Database Applications
  • Highest Performance Tier Storage
  • Cloud and Hyperscale Computing
  • Analytical Processing (OLAP)
  • Boot and Edge
  • Hyper-Converged Infrastructure (HCI)
  • Virtualization